T4.2: S band LNA module detailed design including DC, RF and structural interfaces

The proposed detailed design activities will follow sequential steps fed by output of previous WP4 tasks:

• Analysis [Leader: TAS – M18-M21]:

As any pre-industrialisation of product, analysis (EMC, thermal, electrical, radiation) will previously be conducted to check its full compliance of the LNA module with space environment as defined into Task 1.2.
• S band LNA module design including DC, RF and structural interfaces [Leader: TAS Participant: SOI – M18-M24]
TAS will implement S band LNA module constituted of up to 4 RF chain on same PCB in order to optimize the manufacturing cost per single RF chain. One of the key challenges is to keep the RF and EM shielding at a very low level by limiting the use of bulky and costly metal structure. Key design feature also includes noise factor which will be covered by high performance GaAs RF transistors from European source and SMT microwave passive components necessary for improved matching at Input/Output accesses, amplitude and phase equilibrium between paths. Phase and amplitude dispersion is to be kept as a minimum (See preliminary specification in previous part of the proposal), so that SOI shall deliver to TAS accurate SAW filter models including packaging and manufacturing dispersion for tuning less RF chains.