T3.4: Substrate/wave power handling and substrate heat dissipation [M18-M30]

RF power handling and heat dissipation is critical for an optimal operation of the filter in real environment. Incident power may reach 30 dBm and even larger peak levels (36 dBm). This task therefore is focused on the analysis of the physical capability of the current and alternative POI substrates to withstand such incident power level and to define routes to reinforce future POI substrate capability to handle the above-mentioned power level on standard operation terms. Substrate heat dissipation capability is a key feature in that purpose. The use of Si base wafer is favourable in that purpose but the possibility to improve that situation will be examined based on partner’s know-how and expertise. Power handling and thermal features will be assessed by INC and UCL on filters manufactured by SOI on the reference as well as alternative substrates fabricated in task T3.2. SOI and INC will use the so-produced experimental data as initial conditions to perform finite elements (FE) simulations which will help to define routes to reinforce future POI substrates capability to withstand the required power levels.